IMPACT OF SULFURIZATION ON SPUTTERED BIVO4 THIN FILMS

Authors

Shukur P. GOFUROV, Uzbekistan-Japan Innovation Center of Youth, Tashkent, UzbekistanFollow
Dilbar T. BOZOROVA, Ion-plasma and laser technologies Institute, Tashkent, UzbekistanFollow
Zuhra Ch, KADIROVA, Tashkent Institute of Chemical Technology, SE “Uzbekistan Japan Innovation Center of Youth”, Tashkent, UzbekistanFollow
Oksana ISMAILOVA, Uzbekistan-Japan Innovation Center of Youth, Turin Polytechnic University in Tashkent, UzbekistanFollow

DOI

10.34920/cce202343

Abstract

The sulfurization method has been used to decrease the band gap of the BiVO₄ structure, reduce the recombination of electrons and holes, and increase the photoelectrochemical performance of this material. It has been observed that incorporation of sulfur into stoichiometric and V_rich BiVO₄ is variously affected changing of properties of the structure. Sulfurization can modify V_rich BiVO₄ structure rather than stoichiometric BiVO₄.

Recommended Citation

GOFUROV, Shukur P.; BOZOROVA, Dilbar T.; KADIROVA, Zuhra Ch,; and ISMAILOVA, Oksana (2024) "IMPACT OF SULFURIZATION ON SPUTTERED BIVO4 THIN FILMS," CHEMISTRY AND CHEMICAL ENGINEERING: Vol. 2023: No. 4, Article 3.
DOI: 10.34920/cce202343
Available at: https://cce.researchcommons.org/journal/vol2023/iss4/3